Secondary Ion Mass Spectrometry Imaging
| Autor: | Robert W. Odom |
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| Rok vydání: | 1994 |
| Předmět: | |
| Zdroj: | Applied Spectroscopy Reviews. 29:67-116 |
| ISSN: | 1520-569X 0570-4928 |
| DOI: | 10.1080/05704929408000898 |
| Popis: | Introduction Secondary ion mass spectrometry (SIMS) is a chemical analysis technique that employs mass spectrometry to analyze solid and low volatility liquid samples [1]. Although there are numerous configurations of SIMS instrumentation, the fundamental basis of SIMS analyses is the measurement of the mass and intensity of secondary ions produced in a vacuum by sputtering the surface of the sample with energetic ion or neutral beams. The sputtering beam is referred to as the primary beam and typically has a kinetic energy of several thousand electronvolts (keV). The primary beam removes atomic or molecular layers at a rate determined principally by the intensity, mass, and energy of the primary species and the chemical and physical characteristics of the sample [2]. Particle sputtering at the kiloelectronvolt level produces a variety of products including electrons, photons, atoms, atomic clusters, intact molecules, and distinctive molecular fragments. A small fraction of these sputter products are ioni... |
| Databáze: | OpenAIRE |
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