Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction
| Autor: | V. V. Romanov, A. A. Semakova, K. D. Mynbaev, Konstantin D. Moiseev, N. L. Bazhenov |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Heterojunction 02 engineering and technology Electroluminescence Atmospheric temperature range 021001 nanoscience & nanotechnology Condensed Matter Physics Mole fraction 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Wavelength 0103 physical sciences Optoelectronics 0210 nano-technology business Ternary operation Diode Solid solution |
| Zdroj: | Semiconductors. 55:354-358 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782621030155 |
| Popis: | A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0.28P0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode. |
| Databáze: | OpenAIRE |
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