Metallized photoresists: A new approach to surface imaging
| Autor: | E. K. Pavelchek, G. S. Calabrese, S. M. Bobbio, J. F. Bohland, M. Gulla, L. N. Abali, P. Sricharoenchaikit |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Silicon dioxide Nanotechnology Substrate (electronics) Photoresist Condensed Matter Physics Reflectivity Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Electroless plating chemistry High plasma Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 13:93-96 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(91)90055-i |
| Popis: | G-line photoresists are exposed at 248 nm and subjected to aqueous development and electroless plating to produce submicron, metallized photoresist patterns. The high plasma etch resistance of the photoresist/metal structure allows for efficient pattern transfer into silicon dioxide. A key feature is that optical exposure of only the near-surface of the photoresist is required to achieve selective metallization. This process represents a new approach to surface imaging, reducing complications from substrate reflectivity and topography. 0.4 μm line/space pairs have been transferred into 5000 A of SiO2 on Si. |
| Databáze: | OpenAIRE |
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