The inversion layer of subhalf-micrometer n- and p-channel MOSFET's in the temperature range 208-403 K

Autor:	W. Seifert, P. Staudt-Fischbach, D. Friedrich, H.-J. Wildau, W. Windbracke, H.G. Wagemann, H. Bernt
Rok vydání:	1993
Předmět:	Electron mobility Materials science Equivalent series resistance MOSFET Analytical chemistry X-ray lithography Field-effect transistor Semiconductor device Electrical and Electronic Engineering Atmospheric temperature range NMOS logic Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 40:2318-2325
ISSN:	1557-9646 0018-9383
DOI:	10.1109/16.249481
Popis:	Minority carrier mobility has been extracted from I-V measurements on N- and PMOS-transistors entirely processed by means of X-ray lithography with effective channel lengths down to 0.35 mu m. The measurements have been performed within the temperature range 208-403 K (-65 degrees C to +130 degrees C). The accuracy of the mobility determination has been investigated, especially with regard to the determination of the effective channel length and the series resistance. The results indicate a significant mobility reduction for short-channel NMOS devices at temperatures below 300 K. A slight increase of the threshold-voltage is observed in the short-channel region. Both effects can be required by an inhomogeneous lateral doping profile within the channel due to standard submicron technology; this has been confirmed by two-dimensional device simulation. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a73a665d81fb86c373d119fae11668f5 https://doi.org/10.1109/16.249481 Zobrazit plný text záznamu