Analysis of Forward Surge Performance of SiC Schottky Diodes
| Autor: | Richard L. Woodin, Rahul Radhakrishnan, Nathanael Cueva, Tony Witt |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 020208 electrical & electronic engineering Schottky diode 02 engineering and technology Condensed Matter Physics 01 natural sciences Reliability (semiconductor) Mechanics of Materials 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics General Materials Science Surge business Diode |
| Zdroj: | Materials Science Forum. 924:621-624 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.621 |
| Popis: | Silicon Carbide JBS diodes are capable, in forward bias, of carrying surge current of magnitude significantly higher than their rated current, for short periods. In this work, we examine the mechanisms of device failure due to excess surge current by analyzing variation of failure current with device current and voltage ratings, as well as duration of current surge. Physical failure analysis is carried out to correlate to electrical failure signature. We also quantify the impact, on surge current capability, of the resistance of the anode ohmic contact to the p-shielding region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|