Atomic-scale analysis of the interface structure and lattice mismatch relaxation of Bi2Sr2CaCu2O8+δ/SrTiO3 heterostructure
| Autor: | Weizhen Wang, Mingguang Wang, Lili Jiang, Tianlin Wang, Yuxiang Dai, Jian Zhang, Nan Wang, Yang Qi |
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| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Superconductivity Materials science Condensed matter physics Process Chemistry and Technology Nucleation Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic units Surfaces Coatings and Films Electronic Optical and Magnetic Materials 0103 physical sciences Scanning transmission electron microscopy Materials Chemistry Ceramics and Composites Diffusion (business) 0210 nano-technology Spectroscopy Stacking fault |
| Zdroj: | Ceramics International. 47:8722-8727 |
| ISSN: | 0272-8842 |
| Popis: | With the increasing research on heterojunctions, it is gradually been realized that interface structure and strain have a huge impact on film properties. However, the research on Bi-based superconducting heterojunctions is still lacking and needs to be explored at the atomic-scale. In this article, the interface structure, element diffusion, and lattice mismatch relaxation of the Bi2Sr2CaCu2O8+δ(Bi-2212)/SrTiO3 heterojunction have been investigated by aberration-corrected high-angle annular dark-field scanning transmission electron microscopy (Cs-HAADF STEM), energy-dispersive X-ray spectroscopy (EDX), and geometric phase analysis (GPA). The experiment results reveal the interfacial atomic sequence as SrTiO3(TiO2-terminated)-SrO-Cu/TiO2–Ca–BiO-(Bi-2212)n, where the SrO layer is the nucleation layer and Ti atoms diffuse into the CuO2 layer. The Bi-2212/SrTiO3 heterointerface is found to be semi-coherent and accompanied by the non-ideally periodic arrangement of stand-off misfit dislocations. Moreover, lattice distortion and stacking fault have also been revealed to release part of the in-plane lattice mismatch. Through the combined effect of the above several lattice mismatch relaxation methods, the final Bi-2212 film experiences an average in-plane tensile strain (exx ~ +0.414%) compared with bulk Bi-2212. |
| Databáze: | OpenAIRE |
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