Characteristics of p-channel SOI LDMOS Transistor with Tapered Field Oxides
| Autor: | Sang-Gi Kim, Hoon Soo Park Park, Dae Yong Kim Kim, Jongdae Kim Kim, Tae Moon Roh Roh, Jin-Gun Koo Koo |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
LDMOS
Materials science General Computer Science Field (physics) business.industry Transistor Electrical engineering Oxide Soi ldmos Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound P channel chemistry law Surface field Optoelectronics Breakdown voltage Electrical and Electronic Engineering business |
| Zdroj: | ETRI Journal. 21:22-28 |
| ISSN: | 1225-6463 |
| DOI: | 10.4218/etrij.99.0199.0304 |
| Popis: | A new tapered TEOS oxide technique has been developed to use field oxide of the power integrated circuits. It provides better uniformity of less than 3 % and reproducibility. On-resistance of P-channel RESURF (REduced SURface Field) LDMOS transistors has been optimized and improved by using a novel simulation and tapered TEOS field oxide on the drift region of the devices. With the similar breakdown voltage, at = gs V V 0 . 5 − , the specific on-resistance of the LDMOS with the tapered field oxide is about 2 5 . 31 cm m ⋅ Ω , while that of the LDMOS |
| Databáze: | OpenAIRE |
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