Transient photoconductive gain in a-Si:H devices and its applications in radiation detection

Autor:	Kyung-Sub Shinn, Tae Suk Suh, Bo Young Choe, Gyuseong Cho, Hyoung-Koo Lee, Victor Perez-Mendez
Rok vydání:	1997
Předmět:	Photocurrent Physics Amorphous silicon Nuclear and High Energy Physics business.industry Photoconductivity Gain Signal gain Particle detector chemistry.chemical_compound Optics chemistry Optoelectronics Transient (oscillation) business Instrumentation Visible spectrum
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 399:324-334
ISSN:	0168-9002
DOI:	10.1016/s0168-9002(97)00924-8
Popis:	Using the transient behavior of the photoconductive-gain mechanism, a signal gain in radiation detection with a-Si:H devices may be possible. The photoconductive gain mechanism in two types of hydrogenated amorphous silicon devices, p-i-n and n-i-n configurations, was investigated in connection with applications to radiation detection. Photoconductive gain was measured in two time scales: one for short pulses of visible light ( 2 . Various gain results are discussed in terms of the device structure, applied bias and dark-current density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a725468ca0fb9fac3fdfe088561e0960 https://doi.org/10.1016/s0168-9002(97)00924-8 Zobrazit plný text záznamu Full Text from ScienceDirect