Investigation of Charge-plasma Based Dopingless Tunnel FET for Analog/RF and Linear Applications

Autor: Rikmantra Basu, Suruchi Sharma, Baljit Kaur
Rok vydání: 2021
Předmět:
Zdroj: Silicon. 14:7701-7710
ISSN: 1876-9918
1876-990X
DOI: 10.1007/s12633-021-01514-5
Popis: Tunnel FET (TFET) based upon charged-plasma (CP) concept have came out as a potential Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) replacement as it provides immunization towards short channel effects (SCEs) and random dopant fluctuations (RDFs), along with providing inherent benefits of conventional TFETs such as low off-state current (IOFF) and sub-60 mV/dec subthreshold swing. So, in this manuscript, we investigate a CP-based dopingless TFET (DLTFET) with source and channel made up of Germanium, Si0.6Ge0.4 drain and TiO2 as gate-dielectric using simulations for low power analog/RF and linear applications and abbreviated as HJ HD DLTFET where HJ stands for heterojunction, HD represents high-κ dielectric. In CP-concept, source and drain regions are generated by applying work function for respective electrodes without performing chemical doping. This manuscript investigates, for the first time, a DLTFET which employs a heterojunction of low bandgap material .i.e. Ge as channel and source material and Si0.6Ge0.4 for drain as it is a high bandgap material relative to Ge, along with TiO2 as a high-κ gate dielectric and drain voltage of 0.3 V. The numerical simulations illustrates higher ION, ION/IOFF ratio and improved average sub-threshold swing (SSavg) for HJ HD DLTFET in comparison to conventional DLTFET. Furthermore, we also investigate the analog/RF and linearity parameters of the HJ HD DLTFET to demonstrate its competence in low-power analog, radio frequency (RF), sensors, and linear applications.
Databáze: OpenAIRE
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