Evaluations of heat treatment on polymer adhesive bonding and thermal-induced failure of two-layer through-silicon via structures
| Autor: | Jen Fin Lin, Chung-Jen Chung, Chang-Hong Shen, Chang-Fu Han, Chang Shuo Chang, Wen-Luh Yang, Gien-Huang Wu, Cheng-Li Lin, Rong-Hong Tasi |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Through-silicon via Composite number Metals and Alloys chemistry.chemical_element Strain energy density function 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Benzocyclobutene 0103 physical sciences Electrical and Electronic Engineering Inductively coupled plasma Composite material 0210 nano-technology Instrumentation Elastic modulus |
| Zdroj: | Sensors and Actuators A: Physical. 285:685-699 |
| ISSN: | 0924-4247 |
| DOI: | 10.1016/j.sna.2018.11.006 |
| Popis: | In the present study, upper and lower substrates made of p-type Si were bonded using benzocyclobutene (BCB) glue, which was then solidified via rapid thermal annealing at various chamber atmospheres. Inductively coupled plasma was applied to prepare through-silicon via (TSV) holes that penetrated the wafer-BCB-wafer (WBW) composite specimen. SiO2 and Ti films and copper pillars were deposited and filled in sequence to form the WBW TSV structure. These specimens were prepared for thermal tests to determine the earliest failure (fracture) time (Tfailure) for the Ti and SiO2 films and the time required for electrical current breakdown (TBD) in the specimens. Theoretical models, including the Johnson-Cook (J-C) fracture model and a numerical scheme, were developed to predict the Tfailure values for the Ti and SiO2 films. Black’s equation was applied to determine the variations of specimen activation energy with externally applied bottom surface temperature and electrical voltage. The numerical results for (Tfailure)Ti, (Tfailure)SiO2, and TBD are obtained quite close to those from the experiments. The elastic modulus of the solidified BCB material can be increased by fabricating the WBW structure under high vacuums. A relatively lower BCB elastic modulus can lower the maximum strain energy density required for fracture in the SiO2 film of the TSV structure, thus effectively increasing TBD. The rate of effective activation energy is the dominant factor for TBD. The effective activation energy in the preparation of BCB bonding decreases with increasing the vacuum. |
| Databáze: | OpenAIRE |
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