Autor: |
A.I. Potapov, L.S Okaevitch, S.S. Khludkov, O. P. Tolbanov, O.B. Koretskaya |
Rok vydání: |
1998 |
Předmět: |
|
Zdroj: |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 410:36-40 |
ISSN: |
0168-9002 |
DOI: |
10.1016/s0168-9002(98)00139-9 |
Popis: |
Results on the investigation of electrical characteristics of high-resistivity π-ν-n structures based on GaAs compensated with Cr and charge collection dependences on the average electric field and on detector structures parameters are presented. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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