Modeling and designing a new gas injection diffusion system for metalorganic chemical vapor deposition
| Autor: | T. C. Chuang, Shu San Hsiau, C. C. Liao |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Fluid Flow and Transfer Processes geography Materials science geography.geographical_feature_category Nozzle 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy Inlet 01 natural sciences Chemical engineering 0103 physical sciences Thermal Wafer Metalorganic vapour phase epitaxy Diffusion (business) 0210 nano-technology |
| Zdroj: | Heat and Mass Transfer. 54:115-123 |
| ISSN: | 1432-1181 0947-7411 |
| DOI: | 10.1007/s00231-017-2110-8 |
| Popis: | Metalorganic chemical vapor deposition (MOCVD) is a critical process and is widely used for the epitaxial growth of light-emitting diode (LED) wafers. The key component, a gas injection system, delivers the gas into the reactor by using a nozzle or showerhead. In this paper, the numerical simulation method was applied to investigate the thermal fluid field and to design a new gas injection system for MOCVD. In this study, we developed a new gas injection system with inlet barriers. The inlet barriers can separate the various reactive gases, reduce the prereaction, and prevent adducted particles from forming and blocking the inlet gas system. The barrier geometry, including the barrier length, the barrier inclination angle, and the V/III precursor ratio was systematically studied to determine the optimal design conditions. Higher growth rate and improved uniformity were demonstrated using the new optimal gas inlet barrier design. |
| Databáze: | OpenAIRE |
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