Charge Transport Mechanism in p-Channel Tin Monoxide Thin-Film Transistors
| Autor: | Chan-Yong Jeong, Hee-Joong Kim, Hyuck-In Kwon, Sang-Dae Bae, Jeong-Hwan Lee |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Scattering Electrical engineering Analytical chemistry chemistry.chemical_element Conductance Charge (physics) Monoxide 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Variable-range hopping Electronic Optical and Magnetic Materials Nickel chemistry Thin-film transistor 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology business Tin |
| Zdroj: | IEEE Electron Device Letters. 38:473-476 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2017.2672730 |
| Popis: | In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs) over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, the variable range hopping and the trap-limited band transport are considered as dominant charge transport mechanisms in the SnO TFT at temperatures below ~ 200 K (−73 °C) and above ~273 K (0 °C), respectively, in the subthreshold and transition regions. In the above-threshold region, the intrinsic field-effect mobility ( $\mu _{\mathsf {FEi}})$ decreases with an increase in temperature with a prefactor $\gamma \sim $ -0.36 in the $\mu _{\mathsf {FEi}}\sim {T}^{\gamma }$ law at temperatures ( ${T}\text{s}$ ) between RT and 353 K (80 °C). The observed temperature and gate overdrive voltage dependence of $\mu _{\mathsf {FEi}}$ suggests that the acoustic phonon scattering is the dominant physical mechanism limiting $\mu _{\mathsf {FEi}}$ in the p-type SnO TFT at realistic operating conditions [in the above-threshold region and at temperatures ranging from RT to 353 K (80 °C)]. |
| Databáze: | OpenAIRE |
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