High magnetoelectric coupling in Si-integrated AlN/NiMnIn thin film double layers at room temperature
| Autor: | Anuj Kumar, Kirandeep Singh, Shuvam Pawar, Davinder Kaur |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Heterojunction 02 engineering and technology Nitride 021001 nanoscience & nanotechnology 01 natural sciences Magnetization Ferromagnetism X-ray photoelectron spectroscopy 0103 physical sciences Thin film 0210 nano-technology Coupling coefficient of resonators Wurtzite crystal structure |
| Zdroj: | Applied Physics Letters. 113:242902 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The current study explores the presence of strong magnetoelectric (ME) coupling in a sputtered deposited NiMnIn/aluminum nitride (AlN) heterostructure on an Si substrate. The X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy results confirm the formation of a pure AlN wurtzite phase in the ME heterostructure. The magnetization vs temperature measurement shows the presence of the martensite transformation region of the NiMnIn/AlN heterostructure. The magnetic measurements exhibit the room temperature ferromagnetic nature of the NiMnIn/AlN heterostructure. The NiMnIn/AlN ME heterostructure was found to have a high ME coupling coefficient of ∼99.2 V/cm Oe at Hdc = 300 Oe. The induced ME coupling coefficient shows a linear dependency on Hac up to 8 Oe. |
| Databáze: | OpenAIRE |
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