Systematic deprocessing: a technique for identification of the origins of process-induced damage and threshold voltage shifts

Autor:	A.J. Fischer, Anand T. Krishnan, Srikanth Krishnan, Qi-Zhong Hong, C. Kaneshige
Rok vydání:	2003
Předmět:	Negative-bias temperature instability Materials science Reliability (semiconductor) law Transistor MOSFET Electronic engineering Process (computing) NMOS logic law.invention Threshold voltage PMOS logic
Zdroj:	2003 8th International Symposium Plasma- and Process-Induced Damage..
DOI:	10.1109/ppid.2003.1199724
Popis:	Back-end plasma process-induced damage has become a major concern for device reliability. Previous methods of process characterization do not allow for isolation of a single process within a metal loop. To solve this problem we developed a deprocessing technique that provides the capability for understanding the impact of a single process on transistor performance and reliability. This deprocessing technique is applied to pinpoint the source(s) of plasma damage. It is also used to identify the impact of backend plasma processes on interfacial Si-H concentration, which reportedly affects negative bias temperature instability lifetimes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a6e016bdf43812f8e7b41d87c92b74fe https://doi.org/10.1109/ppid.2003.1199724 Zobrazit plný text záznamu