Optical emission from the interaction of highly charged Xeq+ (6 ≤ q ≤ 23) ions with GaAs surface
| Autor: | Hongwei Zhao, Qiumei Xu, Xuming Zhou, H. P. Liu, Yuntang Chen, Y.P. Guo, Zou Yang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Nuclear and High Energy Physics
Photon Materials science Highly charged ion Charge (physics) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Potential energy Ion Atomic electron transition Excited state 0103 physical sciences Atomic physics 010306 general physics 0210 nano-technology Instrumentation Visible spectrum |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 436:74-77 |
| ISSN: | 0168-583X |
| Popis: | This paper reports the measurement of visible light emission in the collisions of slow (V ∼ 0.38 VBohr) highly charged Xeq+ (6 ≤ q ≤ 23) ions with GaAs surface. The experimental results include Ga I lines from the 4d 2D3/2 and 5 s 2S1/2 to the 4p 2P1/2,3/2 states and Ga II lines belonged to the electron transitions 4p2 1D2 → 4s4p 1P1, 4s5s 1S0 → 4s4p 1P1 and 4s4f 1F3 → 4s4d 3D3. The measurement on the projectile charge state dependences of Ga II at 270.20, 277.90, 426.20 nm and Ga I at 287.65, 294.55, 403.55, 417.35 nm lines is presented. It is concluded that the photon yields increase with charge state in the same way as the potential energy increases and the potential energy is the driving force for optical emission of excited Ga atoms and Ga+ ions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect