Charge trapping in irradiated SOI wafers measured by second harmonic generation

Autor:	F. Brunier, R. Pasternak, M. Fouillat, Sergey N. Rashkeev, Y. V. White, S. Cristoloveanu, Daniel M. Fleetwood, Bongim Jun, Ronald D. Schrimpf, Norman Tolk, N. Bresson
Rok vydání:	2004
Předmět:	Nuclear and High Energy Physics Materials science business.industry Second-harmonic generation Silicon on insulator Trapping Signal Nuclear Energy and Engineering MOSFET Optoelectronics Wafer Electrical measurements Surface second harmonic generation Electrical and Electronic Engineering business
Zdroj:	IEEE Transactions on Nuclear Science. 51:3231-3237
ISSN:	0018-9499
DOI:	10.1109/tns.2004.839140
Popis:	Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a6cc7b8d9dd20587c9482683c3274ac0 https://doi.org/10.1109/tns.2004.839140 Zobrazit plný text záznamu