Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

Autor:	Vo Van Tuyen, Dean Korošak, B Cvikl, T Mrdjen, M Ádám, Zs J Horváth, Cs Dücsö, I Bársony, Zs Makaró, I Pintér
Rok vydání:	1998
Předmět:	Materials science Condensed matter physics Equivalent series resistance Schottky diode Plasma Condensed Matter Physics Instrumentation Ohmic contact Deposition (law) Poor quality Beam (structure) Surfaces Coatings and Films
Zdroj:	Vacuum. 50:417-419
ISSN:	0042-207X
DOI:	10.1016/s0042-207x(98)00076-1
Popis:	Recently high temperature dependence of series resistance was obtained in Ag\n -Si and Al\ n-Si\p-Si Schottky junctions prepared by ionised cluster beam deposition and by plasma immersion implantation, respectively. In this work it is shown by experiments that this feature was due to the poor quality of backside ohmic contacts.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a6c0cbaba16cda8f0723c4cef5a1aa00 https://doi.org/10.1016/s0042-207x(98)00076-1 Zobrazit plný text záznamu Full Text from ScienceDirect