| Popis: |
Zinc oxide is one of the most important semiconductor metal oxides and one of the most promising n-type materials, but its practical use is limited because of both its high thermal conductivity and its low electrical conductivity. Numerous studies have shown that doping with metals in ZnO structures leads to the modification of the band gap energy. In this work, Al-doped ZnO, Ni-doped ZnO, and undoped ZnO nanocrystalline powders were prepared by sol-gel method coupled with ultrasound irradiation. The doping concentration in ZnO was 1.0 at.% of Al and Ni. Influence of Al3+ and Ni2+ ions in the ZnO network are explored in this paper. X-ray Diffraction (XRD), Raman Spectroscopy, Nitrogen Adsorption (BET method), X-Ray Fluorescence (XRF) and Field Emission Scanning Electron Microscopy (FESEM) analyses demonstrated the incorporation of metal ions (aluminum and nickel) into the ZnO wurtzite structure. The crystallite size of the sample was decreased from 24.5 nm (ZnO) to 22.0 nm (ZnO-Al) and 21 nm (ZnO-Ni). |
