Reliability Issues with Mixed-Signal CMOS Technology

Autor:	Chih Sieh Teng, Ji Zhao, Rajeeva Lahri, Hung-Sheng Chen, Kamesh V. Gadepally
Rok vydání:	1995
Předmět:	Digital electronics Materials science Analogue electronics business.industry Mixed-signal integrated circuit Hardware_PERFORMANCEANDRELIABILITY Chip law.invention Reliability (semiconductor) CMOS Gate oxide law Hardware_INTEGRATEDCIRCUITS Electronic engineering Resistor business
Zdroj:	MRS Proceedings. 391
ISSN:	1946-4274 0272-9172
Popis:	In a Mixed-Signal IC, both digital and analog circuits exist on the same chip. Analog circuit blocks require technology attributes like precise device matching, low parametric drifts and low noise. These requirements raise additional reliability issues, over and above the reliability concerns associated with digital circuits. CMOS device reliability for mixed-signal technologies can be enhanced by modifying device architecture and improving gate oxide integrity. Interconnect metallurgy plays an important role in determining electromigration related contact/via resistance change which may impact matching of devices and resistor pairs. Appropriate source/drain engineering, device design and utilizing nitrided gate oxide has been shown to produce extremely stable devices. This article will cover process architecture and material issues related with device stability and interconnect metallurgy issues related with contact/via stability, especially with W-Plugs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a6b9733a6583b4b6a51bee2b221629ee https://doi.org/10.1557/proc-391-47 Zobrazit plný text záznamu Full text from SpringerLink