Nonuniformity in the spatial distribution of negative luminescence in InAsSb(P) photodiodes (long-wavelength cutoff λ0.1 = 5.2 μm)
| Autor: | I. V. Mzhelskii, S. A. Karandashev, V. G. Polovinkin, B. A. Matveev, A. Yu. Rybal’chenko, N. M. Stus, M. A. Remennyi |
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| Rok vydání: | 2012 |
| Předmět: |
Photocurrent
Materials science business.industry Current crowding Negative luminescence Condensed Matter Physics Spatial distribution Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention law Optoelectronics Cutoff business Sensitivity (electronics) Voltage |
| Zdroj: | Semiconductors. 46:247-250 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The spatial nonuniformity of negative luminescence and current crowding in InAsSb(P) mid-IR photodiodes is analyzed in relation to the applied voltage and contact size values. It is shown that this non-uniformity is one of the main causes of the poor sensitivity of photodiodes which have low dynamic resistance at zero bias and which operate in the photocurrent mode. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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