Process characterization of inductively coupled plasma etched silicon nanopillars by micro-Raman
| Autor: | P. Boland, T. Eschrich, Christian D. Poweleit, G. M. Laws, A. Handugan, S. Myhajlenko, C. Sinclair |
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| Rok vydání: | 2007 |
| Předmět: |
Materials science
Plasma etching Silicon business.industry Black silicon Analytical chemistry chemistry.chemical_element Condensed Matter Physics chemistry.chemical_compound symbols.namesake chemistry symbols Optoelectronics Electrical and Electronic Engineering Reactive-ion etching Inductively coupled plasma business Raman spectroscopy Plasma processing Nanopillar |
| Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 25:2059 |
| ISSN: | 1071-1023 |
| DOI: | 10.1116/1.2781514 |
| Popis: | The authors report on the top-down fabrication of silicon nanopillar arrays using electron beam lithography and enhanced plasma etch protocols for producing smoothed sidewalls. They have used cold development (2–4°C) to minimize line edge roughness in the patterned features. Standard reactive ion etch and inductively coupled plasma etch techniques have been used to fabricate nanopillar arrays, 60–100nm in diameter, with aspect ratios up to 20:1. They describe the use of a cyclic plasma oxidation and etch procedure to reduce sidewall roughness of silicon etched by the Bosch® process. The optimization of the smoothing process is demonstrated to produce near roughness free sidewalls. Raman spectroscopy has been used to characterize both the attributes of the nanopillars (including black silicon) and the effects of plasma processing. Preliminary results indicate that the Raman technique can distinguish the quality of the nanopillars (from processing perspective) based on intensity, spectral shifts, and change... |
| Databáze: | OpenAIRE |
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