Gas selectivity of SILAR grown CdS nano-bulk junction
| Autor: | R. Jayakrishnan, Meera Venugopal, Akhil M. Anand, Varun G. Nair |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Kelvin probe force microscope
Materials science Hydrogen 010401 analytical chemistry technology industry and agriculture Analytical chemistry chemistry.chemical_element Schottky diode 02 engineering and technology Partial pressure 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Oxygen Isothermal process 0104 chemical sciences Electronic Optical and Magnetic Materials chemistry Operating temperature Materials Chemistry Work function Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Journal of Semiconductors. 39:033002 |
| ISSN: | 1674-4926 |
| Popis: | Nano-particles of cadmium sulphide were deposited on cleaned copper substrate by an automated sequential ionic layer adsorption reaction (SILAR) system. The grown nano-bulk junction exhibits Schottky diode behavior. The response of the nano-bulk junction was investigated under oxygen and hydrogen atmospheric conditions. The gas response ratio was found to be 198% for Oxygen and 34% for Hydrogen at room temperature. An increase in the operating temperature of the nano-bulk junction resulted in a decrease in their gas response ratio. A logarithmic dependence on the oxygen partial pressure to the junction response was observed, indicating a Temkin isothermal behavior. Work function measurements using a Kelvin probe demonstrate that the exposure to an oxygen atmosphere fails to effectively separate the charges due to the built-in electric field at the interface. Based on the benefits like simple structure, ease of fabrication and response ratio the studied device is a promising candidate for gas detection applications. |
| Databáze: | OpenAIRE |
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