Optical and structural properties of Si doped β-Ga2O3 (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Autor:	Bahadir Kucukgok, Mandia, David J, Leach, Jacob H, Evans, Keith R, Eastman, Jeffrey A, Zhou, Hua, Hryn, John, Elam, Jeffrey W., Yanguas-Gil, Angel
Rok vydání:	2019
DOI:	10.13140/rg.2.2.20901.76001
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a69f11984050f67cdb0c7e5efb331a43 Zobrazit plný text záznamu