Polysilicon microbridge fabrication using standard CMOS technology

Autor:	A.M. Robinson, M. Parameswaran, H.P. Baltes
Rok vydání:	2003
Předmět:	Fabrication Materials science Passivation Silicon business.industry chemistry.chemical_element Nanotechnology Hardware_PERFORMANCEANDRELIABILITY Field oxide chemistry CMOS Etching (microfabrication) Hardware_INTEGRATEDCIRCUITS Optoelectronics Cmos process business Layer (electronics)
Zdroj:	IEEE Technical Digest on Solid-State Sensor and Actuator Workshop.
DOI:	10.1109/solsen.1988.26463
Popis:	A technique is described for fabricating polysilicon microbridges using a standard industrial CMOS process. The introduction of layout methodologies enables the authors to fabricate CMOS compatible microbridge structures requiring only one additional postprocessing step. This step involves etching of the field oxide below the polysilicon layer in CMOS process which is equivalent to the sacrificial layer that is typical of any microbridge fabrication procedure. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a69bc5ed2e2345963431fb83418f4c0e https://doi.org/10.1109/solsen.1988.26463 Zobrazit plný text záznamu