The HMM-TLP Miscorrelation at Wafer Level Tests
| Autor: | Hossein Sarbishaei, David Marreiro, Vladislav Vashchenko, Andrei Shibkov, Slavica Malobabic |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Test setup Electrostatic discharge Materials science 020206 networking & telecommunications 02 engineering and technology 01 natural sciences 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Strong coupling Wafer Voltage range Hidden Markov model Electrical impedance Simulation |
| Zdroj: | 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD). |
| DOI: | 10.23919/eos/esd.2018.8509766 |
| Popis: | A strong miscorrelation between TLP maximum current to failure and corresponding estimated onwafer-HMM pulse passing level of dual-direction SCR ESD device was studied. For multiple SCR ESD devices in 5-80V voltage range the effect was represented by low HMM passing level due to burnout of the structure Npocket to P-substrate isolation junction. It is shown that the phenomenon is specific to the on-wafer HMM test setup itself and is the result of the direct strong coupling of the wafer to the prober chuck at system ground under inductive impedance of the HMM tool connection to the DUT. |
| Databáze: | OpenAIRE |
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