Structural and optical properties of InP quantum dots grown on GaAs(001)
| Autor: | F. Iikawa, M. J. Morschbacher, Paulo Fernando Papaleo Fichtner, Joao Marcelo J. Lopes, Mônica A. Cotta, M. J. S. P. Brasil, M. K. K. Nakaema, José Roberto Ribeiro Bortoleto, Rogério Magalhães-Paniago, M. P. F. de Godoy |
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| Rok vydání: | 2007 |
| Předmět: |
Diffraction
Photoluminescence Materials science business.industry Physics::Optics General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Electron diffraction Quantum dot Transmission electron microscopy X-ray crystallography Dispersion (optics) Optoelectronics business |
| Zdroj: | Journal of Applied Physics. 101:073508 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | We investigated structural and optical properties of type-II InP/GaAs quantum dots using reflection high energy electron diffraction, transmission electron microscopy, atomic force microscopy, grazing incidence x-ray diffraction, and photoluminescence techniques. The InP dots present an efficient optical emission even when they are uncapped, which is attributed to the low surface recombination velocity in InP. We compare the difference in the optical properties between surface free dots, which are not covered by any material, with dots covered by a GaAs capping layer. We observed a bimodal dispersion of the dot size distribution, giving rise to two distinct emission bands. The results also revealed that the strain accumulated in the InP islands is slightly relieved for samples with large InP amounts. An unexpected result is the relatively large blue shift of the emission band from uncapped samples as compared to capped dots. |
| Databáze: | OpenAIRE |
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