P-6: Zn[sub 0.97]Zr[sub 0.03]O-TFT Fabricated by Sol-Gel Method and Its Application for Active Matrix LCDs

Autor:	Bor-Chuan Chuang, Chin-Chih Yu, Chia-Hao Tsai, Shuo-Wei Liang, Fan-Wei Chang, Shin-Chuan Chiang, Chien-Yie Tsay
Rok vydání:	2008
Předmět:	Materials science business.industry Field effect Threshold voltage Active matrix law.invention Thin-film transistor law Electronic engineering Optoelectronics Thin film business Layer (electronics) Sol-gel
Zdroj:	SID Symposium Digest of Technical Papers. 39:1188
ISSN:	0097-966X
DOI:	10.1889/1.3069347
Popis:	In this study, Zn0.97Zr0.03O thin films were prepared by sol-gel method and TFTs with Zn0.97Zr0.03O active channel layer were fabricated. Field effect mobility and threshold voltage of the Zn0.97Zr0.03O-TFT are 0.0042 cm2/V-sec and 24.5 V, respectively. In addition, a 4.1″ diagonal QVGA AM-LCD driven by Zn0.97Zr0.03O-TFT has been successfully developed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a67ab8ed363947bcd4ae35a5c95b60c3 https://doi.org/10.1889/1.3069347 Zobrazit plný text záznamu Plný text