Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)

Autor:	Xu Bo, Liu Feng-Qi, Ding Ding, Sun Zhongzhe, Wang Zhan-Guo
Rok vydání:	1999
Předmět:	Inorganic Chemistry Materials science Photoluminescence Condensed matter physics Quantum dot Materials Chemistry Spontaneous emission Self-assembly Condensed Matter Physics Luminescence Ternary operation Molecular beam epitaxy Self assembled
Zdroj:	Journal of Crystal Growth. 204:24-28
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(99)00161-x
Popis:	InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The structural and optical properties were characterized using TEM and PL, respectively. Experimental results show that, a larger critical thickness is required for In0.9Al0.1As dots formation than for InAs dots, the In0.9Al0.1As dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both InAs and In0.9Al0.1As dots, and In0.9Al0.1As dots give narrower luminescence than InAs dots. (C) 1999 Elsevier Science B.V. All rights reserved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a66b8b01f2deb2077a618645d1fc30c2 https://doi.org/10.1016/s0022-0248(99)00161-x Zobrazit plný text záznamu Full Text from ScienceDirect