Towards an Improved Understanding of CIGS Thin Film Solar Cells
| Autor: | Lavrenko, T., Vidal Lorbada, R., Mücke, D., Walter, T., Plesz, B., Schäffler, R. |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20172017-3ao.8.3 |
| Popis: | 33rd European Photovoltaic Solar Energy Conference and Exhibition; 1013-1016 CIGS/CdS thin films and completed devices demonstrate pronounced metastable behavior. On device level, metastabilities can be detected by photoluminescence (PL) imaging. After hot light soaking (HLS) PL intensity of devices increases correlating to the improved Voc. To the contrary, dark annealing degrades PL intensity which corresponds to the reduced Voc values. A question which is still open and being addressed in this contribution is what determines PL intensity on CIGS/CdS thin films. In order to build an appropriate model, PL images are correlated to vibrating Kelvin probe measurements. It has been found that the presence of the CdS layer and induced band-bending at the absorber/buffer interface determine the PL signal from the discussed thin films. The origin of band-bending can be still debated. Furthermore, the impact of band-bending on P1 shunting and the lateral conductivity of the CIGS layer has been investigated. Dark current-voltage measurements on test thin films with a broad P1 scribe (300 μm) indicated that P1 shunting can be modified by the pn-junction formation and certain sample treatments. Moreover, the contribution of P1 shunting to the overall shunt conductance was estimated. It has been shown that shunt conductance of studied devices is not dominated by the P1 shunt and shows perfect stability during long term endurance test. |
| Databáze: | OpenAIRE |
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