Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy
| Autor: | Majid Zandian, F. Erdem Arkun, Jon Ellsworth, Sheri Douglas, Dennis D. Edwall, Michael Carmody |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Infrared Infrared spectroscopy 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials law.invention Optics Optical microscope Ellipsometry law 0103 physical sciences Materials Chemistry Optoelectronics Wafer Electrical and Electronic Engineering 0210 nano-technology business Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 46:5374-5378 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-017-5441-9 |
| Popis: | Recent advances in growth of Hg1−xCdxTe films on large-area (7 cm × 7.5 cm) CdZnTe (CZT) substrates is presented. Growth of Hg1−xCdxTe with good uniformity on large-area wafers is achieved using a Riber 412 molecular beam epitaxy (MBE) tool designed for growth of Hg1−xCdxTe compounds. The reactor is equipped with conventional CdTe, Te, and Hg sources for achieving uniform exposure of the wafer during growth. The composition of the Hg1−xCdxTe compound is controlled in situ by employing a closed-loop spectral ellipsometry technique to achieve a cutoff wavelength (λco) of 14 μm at 78 K. We present data on the thickness and composition uniformity of films grown for large-format focal-plane array applications. The composition and thickness nonuniformity are determined to be |
| Databáze: | OpenAIRE |
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