Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Autor:	Khushwant Sehra, null Chanchal, Anupama Anand, Vandana Kumari, null Reeta, Mridula Gupta, Meena Mishra, D. S. Rawal, Manoj Saxena
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 70:2612-2615
ISSN:	1557-9646 0018-9383
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a64cf2a29e4f7629d119c14bffeafabc https://doi.org/10.1109/ted.2023.3262228 Zobrazit plný text záznamu