HfO2–SiO2 interface in PVD coatings
| Autor: | G. Théret, M. Olivier, V. Cosnier, B. André |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Total internal reflection
Materials science business.industry Analytical chemistry chemistry.chemical_element Germanium Surfaces and Interfaces Condensed Matter Physics Evaporation (deposition) Surfaces Coatings and Films Optical coating chemistry Microelectronics Optoelectronics Thin film Silicon oxide business Refractive index |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2267-2271 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Hafnium oxide presents a strong interest either for optical coatings or for microelectronic applications. An important parameter to control is its chemical interaction with silicon oxide, since those two materials are usually in direct contact in both applications: For optical coatings, silica is the low refractive index used to make interference filters [see M. R. Kozlowski, Thin Films for Optical Systems (Marcel Dekker, New York)], in microelectronics HfO2 could be used as a gate insulator in metal-oxide semiconductor technology [B. H. Lee, Tech. Dig. Int. Electron Devices Meet. 99, 133]. One interesting characterization method of the created interface is infrared spectroscopy in the so-called multiple internal reflection (MIR) technique. Mono- and bilayers of HfO2 and SiO2 have been deposited on germanium substrates by e-beam evaporation and ion beam sputtering. MIR measurements made on those samples show that when HfO2 is deposited on SiO2, parts of the Si–O–Si bonds are broken and Hf–O–Si bonds, repr... |
| Databáze: | OpenAIRE |
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