Pseudomorphic HEMT Devices for Microwave and Millimeter Wave Applications

Autor:	C.S. Wu, C.K. Pao, M. Hu, S.X. Bar, G.L. Lan
Rok vydání:	1993
Předmět:	Manufacturing technology Materials science business.industry Integrated circuit High-electron-mobility transistor Technology development law.invention Low noise Reliability (semiconductor) law Extremely high frequency Optoelectronics business Microwave
Zdroj:	MRS Proceedings. 300
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-300-41
Popis:	Pseudomorphic HEMT (PHEMT) devices have demonstrated superior performance at microwave and millimeter wave frequency ranges. They exhibit multi-functional characteristics such as high power, high efficiency and low noise over a broad frequency range (C-band through W-band). Because of their important, broad range of applications, the microwave industry has recently begun developing the PHEMT manufacturing technology in order to cope with the increasing demand for PHEMT insertion into microwave products. In this paper we will discuss the advantages of using PHEMT devices for microwave and millimeter wave applications and provide an overview of the published state-ofthe-art performance of PHEMT devices and monolithic microwave integrated circuits (MMICs) at microwave and millimeter wave frequencies. We will also present recent progress in Hughes PHEMT technology development including device epitaxial design and process enhancements. Finally, we will present recent data on PHEMT reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a62254a28738421e5743eeabe9aad881 https://doi.org/10.1557/proc-300-41 Zobrazit plný text záznamu Full text from SpringerLink