Effect of Top Channel Thickness in Near Infrared Organic Phototransistors with Conjugated Polymer Gate-Sensing Layers
| Autor: | Youngkyoo Kim, Hwajeong Kim, Dong-Ik Song, Ji-Su Park, Taehoon Kim, Chulyeon Lee |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Nir light
Materials science Computer Networks and Communications 02 engineering and technology Conjugated system 010402 general chemistry 01 natural sciences law.invention CLs upper limits law Electrical and Electronic Engineering chemistry.chemical_classification business.industry Transistor Near-infrared spectroscopy Polymer 021001 nanoscience & nanotechnology 0104 chemical sciences Light intensity Wavelength chemistry Hardware and Architecture Control and Systems Engineering Signal Processing Optoelectronics 0210 nano-technology business |
| Zdroj: | Electronics. 8:1493 |
| ISSN: | 2079-9292 |
| Popis: | Here, we report the thickness effect of top channel layers (CLs) on the performance of near infrared (NIR)-detecting organic phototransistors (OPTRs) with conjugated polymer gate-sensing layers (GSLs). Poly(3-hexylthiophene) (P3HT) was employed as a top CL, while poly[{2,5-bis-(2-octyldodecyl)-3,6-bis-(thien-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-diyl}-co-{2,2′-(2,1,3-benzothiadiazole)-5,5′-diyl}] (PODTPPD-BT) was used as a GSL. The thickness of P3HT CLs was varied from 10 to 70 nm. Three different wavelengths of NIR light (λ = 780, 905, and 1000 nm) were introduced and their light intensity was fixed to 0.27 mW cm−2. Results showed that all fabricated devices exhibited typical p-channel transistor behaviors and the highest drain current in the dark was obtained at the P3HT thickness (t) of 50 nm. The NIR illumination test revealed that the NIR photoresponsivity (RC) of GSL-OPTRs could be achieved at t = 50 nm irrespective of the NIR wavelength. The maximum RC of the optimized devices (t = 50 nm) reached ca. 61% at λ = 780 nm and ca. 47% at λ = 1000 nm compared to the theoretical maximum photoresponsivity. |
| Databáze: | OpenAIRE |
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