A 22GS/s 5b adc in 0.13/spl mu/m SiGe BiCMOS

Autor: Daniel Pollex, Shing-Chi Wang, Naim Ben-Hamida, Chris Falt, Peter Schvan
Rok vydání: 2006
Předmět:
Zdroj: 2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers.
DOI: 10.1109/isscc.2006.1696297
Popis: A 22GS/S 5b ADC implemented in 130nm SiGe BiCMOS technology is presented. The ADC has 0.64V input range and achieves 4.4b and 3.5b ENOB with 34dB and 29dB SFDR at 5GHz and 7GHz input frequencies, respectively. Measured DNL and INL are
Databáze: OpenAIRE