Autor: |
Daniel Pollex, Shing-Chi Wang, Naim Ben-Hamida, Chris Falt, Peter Schvan |
Rok vydání: |
2006 |
Předmět: |
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Zdroj: |
2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers. |
DOI: |
10.1109/isscc.2006.1696297 |
Popis: |
A 22GS/S 5b ADC implemented in 130nm SiGe BiCMOS technology is presented. The ADC has 0.64V input range and achieves 4.4b and 3.5b ENOB with 34dB and 29dB SFDR at 5GHz and 7GHz input frequencies, respectively. Measured DNL and INL are |
Databáze: |
OpenAIRE |
Externí odkaz: |
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