Nature of defects in the Si‐SiO2system generated by vacuum‐ultraviolet irradiation

Autor:	P. Balk, K. G. Druijf, J. M. M. de Nijs, E. H. A. Granneman, E. V. D. Drift
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) business.industry Oxide chemistry.chemical_element Vacuum ultraviolet Condensed Matter::Materials Science chemistry.chemical_compound chemistry Optoelectronics Irradiation business Ultraviolet radiation
Zdroj:	Applied Physics Letters. 65:347-349
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112971
Popis:	We have used high‐frequency and quasi‐static capacitance‐voltage measurements to study the properties of interface states generated upon vacuum‐ultraviolet irradiation under positive gate bias followed by neutralization of the holes trapped in the oxide. The data indicate the exclusive generation of fast donor‐type states that anneal at room temperature. We propose that these states explain the turn‐around effect and annealing of positive charge.
Databáze:	OpenAIRE
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