Epitaxial oxides on silicon grown by molecular beam epitaxy
| Autor: | Jay Curless, B-Y Ngyuen, Ravi Droopad, Jamal Ramdani, Jeff Finder, Kurt Eisenbeiser, Jun Wang, B. Ooms, Vidya Kaushik, Zhiyi Yu, Lyndee L. Hilt, John L. Edwards, Corey Overgaard |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction Silicon Gate dielectric Analytical chemistry Mineralogy chemistry.chemical_element Heterojunction Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Materials Chemistry Strontium titanate Thin film Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. :936-943 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/s0022-0248(01)00931-9 |
| Popis: | Using molecular beam epitaxy, thin films of perovskite-type oxide Sr x Ba 1-x TiO 3 (0 ≤ x ≤ 1) have been grown epitaxially on Si(001) substrates. Growth parameters were determined using reflection high energy electron diffraction (RHEED). Observation of RHEED during growth and X-ray diffraction analysis indicates that high quality heteroepitaxy on Si takes place with Sr x Ba 1-x TiO 3 (001)//Si(001) and Sr x Ba 1-x TiO 3 [010]//Si[110]. Extensive atomic simulations have also been carried out to understand the interface structure and give some insights into the initial growth mechanism of the oxide layers on silicon. SrTiO 3 layers grown directly on Si were used as the gate dielectric for the fabrication of MOSFET devices. An effective oxide thickness < 10 A has been obtained for a 110 A thick SrTiO 3 dielectric film with interface state density around 6.4 x 10 10 /cm 2 /eV, and the inversion layer carrier mobilities of 220 and 62 cm 2 V/s for NMOS and PMOS devices, respectively. |
| Databáze: | OpenAIRE |
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