Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors
Autor: | Ken Maggio, Hal Edwards, Udumbara Wijesinghe, Gangyi Hu, Mark Lee, Clint Naquin |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Transconductance Amplifier Transistor chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry law 0103 physical sciences MOSFET Bound state Optoelectronics 0210 nano-technology business Quantum well NMOS logic |
Zdroj: | Applied Physics Letters. 111:153503 |
ISSN: | 1077-3118 0003-6951 |
Popis: | Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications. |
Databáze: | OpenAIRE |
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