Positive and negative gain exceeding unity magnitude in silicon quantum well metal-oxide-semiconductor transistors

Autor: Ken Maggio, Hal Edwards, Udumbara Wijesinghe, Gangyi Hu, Mark Lee, Clint Naquin
Rok vydání: 2017
Předmět:
Zdroj: Applied Physics Letters. 111:153503
ISSN: 1077-3118
0003-6951
Popis: Intrinsic gain (AV) measurements on Si quantum well (QW) n-channel metal-oxide-semiconductor (NMOS) transistors show that these devices can have |AV| > 1 in quantum transport negative transconductance (NTC) operation at room temperature. QW NMOS devices were fabricated using an industrial 45 nm technology node process incorporating ion implanted potential barriers to define a lateral QW in the conduction channel under the gate. While NTC at room temperature arising from transport through gate-controlled QW bound states has been previously established, it was unknown whether the quantum NTC mechanism could support gain magnitude exceeding unity. Bias conditions were found giving both positive and negative AV with |AV| > 1 at room temperature. This result means that QW NMOS devices could be useful in amplifier and oscillator applications.
Databáze: OpenAIRE