Extension of KrF lithography to sub-50-nm pattern formation

Autor:	Kouichirou Tsujita, Wataru Wakamiya, Takayiki Saitoh, Akihiro Nakae, Itaru Kanai, Ichiriou Arimoto, H. Matsubara, Shuji Nakao, Jiroh Itoh
Rok vydání:	2000
Předmět:	Materials science business.industry Extreme ultraviolet lithography Photoresist law.invention Optics law Phase-shift mask X-ray lithography Photomask Photolithography business Lithography Next-generation lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.389025
Popis:	Sub-50 nm isolated line pattern is successfully formed by KrF lithography with DOF larger than 0.5 micrometers . This is performed by using a phase edge type phase shift mask, a special photo resist and a partial dry ashing process. Because all of these elemental techniques currently becomes mature, this method is one of promising candidates for sub- 50 nm isolated line pattern formation. As a conclusion, we consider KrF lithography can be extended to sub-50 nm high speed logic node.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5ff33c7b7c248af26e9519d4fb74638 https://doi.org/10.1117/12.389025 Zobrazit plný text záznamu