The state-of-the-art and future trends in DRAMs

Autor:	Chang-Gyu Hwang, Suk-woo Lee, Myoung-Bum Lee
Rok vydání:	1996
Předmět:	Engineering Interconnection Hardware_MEMORYSTRUCTURES business.industry General Engineering Integrated circuit law.invention Giga law Megabit Embedded system Electronic engineering State (computer science) Isolation (database systems) business Low voltage Dram
Zdroj:	Microelectronics Journal. 27:777-783
ISSN:	0026-2692
DOI:	10.1016/0026-2692(96)00004-3
Popis:	The production of future generation DRAM devices critically requires R&D of process technologies for highly integrable and cost effective processes. Also, in order to support the ever-increasing requirements for high performance operation, the future DRAM products should be equipped with the capabilities of low voltage operation and high speed. This paper presents an overview of process technology for deep sub-micrometer devices such as a 256 Mbit DRAM based upon current research data and giga bit DRAMs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5fcc9032070bb4115dcb50e377383d6 https://doi.org/10.1016/0026-2692(96)00004-3 Zobrazit plný text záznamu Full Text from ScienceDirect