On the threshold of damage formation in aluminum oxide via electronic excitations

Autor:	N.S. Kirilkin, Vladimir A. Skuratov, J.H. O'Connell, J.H. Neethling
Rok vydání:	2014
Předmět:	Nuclear and High Energy Physics Range (particle radiation) Materials science Ionization Ion track Radiation damage Sapphire Stopping power (particle radiation) Irradiation Atomic physics Instrumentation Ion
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 326:223-227
ISSN:	0168-583X
Popis:	This work is aimed to determine the threshold of dense ionization induced damage formation and their morphology in sapphire single crystals irradiated with 1.2 MeV/amu Xe ions. Cross-sectional TEM examination of r-oriented Al2O3 specimens irradiated to fluences of 2 × 1012 and 2 × 1013 cm−2 has revealed discontinuous ion tracks visible from the irradiated surface up to a depth of 7.6 ± 0.1 μm. According to the SRIM code calculation, the threshold electronic stopping power for track formation in Al2O3 is within the range 9.8 ÷ 10.5 keV/nm. This value agrees with those predicted by both inelastic and analytical thermal spike models.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5f7133d190305e6aeb44fcfe4bcaf5f https://doi.org/10.1016/j.nimb.2013.10.037 Zobrazit plný text záznamu Full Text from ScienceDirect