Low energy electron‐enhanced etching of GaAs(100) in a chlorine/hydrogen dc plasma

Autor:	Li Song, D. A. Choutov, H. P. Gillis, Kevin P. Martin
Rok vydání:	1996
Předmět:	Physics and Astronomy (miscellaneous) Hydrogen fungi technology industry and agriculture Analytical chemistry chemistry.chemical_element macromolecular substances Plasma Radiation chemistry Anode Reaction rate stomatognathic system chemistry Etching (microfabrication) Chlorine Gas composition
Zdroj:	Applied Physics Letters. 68:2255-2257
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.115876
Popis:	Low energy electron‐enhanced etching of GaAs(100) has been achieved by placing the sample on the anode of a low‐pressure hydrogen/chlorine dc discharge. Samples etched at room temperature reveal good anisotropy (≳20), good selectivity (≳200 against SiO2 masks at room temperature), and smooth surfaces at etch rates of 250 A/min; etch rates up to 4.5 μm/min were achieved at 150 °C. The dependence of the etch characteristics on gas composition, pressure, and temperature is described.
Databáze:	OpenAIRE
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