Rapid synthesis of gallium nitride powder
| Autor: | Michael G. Spencer, Lori A. Lepak, Huaqiang Wu, Francis J. DiSalvo, Kyota Uheda, Phanikumar Konkapaka, Janet L. Hunting |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Glow Discharge Mass Spectrometry
Scanning electron microscope Analytical chemistry Cathodoluminescence Gallium nitride Condensed Matter Physics Inorganic Chemistry chemistry.chemical_compound symbols.namesake chemistry X-ray crystallography Materials Chemistry symbols Crystallite Raman spectroscopy Stoichiometry |
| Zdroj: | Journal of Crystal Growth. 279:303-310 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2005.02.040 |
| Popis: | The synthesis of high purity, single-phase gallium nitride (GaN) powder has been achieved through the reaction between molten Ga and ammonia (NH 3 ) using Bi as a catalyst. In this simple apparatus, 25 g Ga can be fully, stoichiometrically converted into GaN within 5 h. The optimum temperature, NH 3 flow rate and reaction time in this hot wall tube furnace were 1000 °C, 500 standard cubic centimeters per minute (sccm) and 5 h, respectively. The synthesized powder was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), glow discharge mass spectrometry (GDMS), Raman spectroscopy, and cathodoluminescence (CL). All of these techniques indicated high purity, hexagonal polycrystalline GaN with 1–20 μm across plate like grains. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect