Progress and Prospects of Spin Transfer Torque Random Access Memory
| Autor: | D. K. Lottis, S.J. Poon, Vladimir Nikitin, Mircea R. Stan, Mohamad Towfik Krounbi, William H. Butler, Kiseok Moon, Rosa A. Lukaszew, A. Driskill-Smith, P. B. Visscher, Steven M. Watts, Dmytro Apalkov, Jiwei Lu, Eugene Chen, Subhadra Gupta, Avik W. Ghosh, Tim Mewes, Stuart A. Wolf, R. Kawakami, X. Tang, Alexey Vasilyevitch Khvalkovskiy, A. Ong, Claudia Mewes |
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| Rok vydání: | 2012 |
| Předmět: |
Physics
Magnetoresistive random-access memory Hardware_MEMORYSTRUCTURES business.industry Electrical engineering Magnetic storage Spin-transfer torque Integrated circuit design Electronic Optical and Magnetic Materials law.invention Soft error CMOS law Wafer Electrical and Electronic Engineering business Antiparallel (electronics) |
| Zdroj: | IEEE Transactions on Magnetics. 48:3025-3030 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2012.2198451 |
| Popis: | We report our progress on material improvement, device design, wafer processing, integration with CMOS, and testing of STT-RAM memory chips at 54 nm node with cell sizes of 14 and 28 F2 (F=54 nm). A dual tunnel barrier MTJ structure was found to have lower and more symmetric median spin transfer torque writing switching currents, and much tighter parallel to antiparallel switching current distribution. In-plane MTJ devices write endurance data, read and write soft error rates data and simulation fits, and solutions to the long write error rate tail at fast write speeds are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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