Detection of Stable and Metastable Interface States in Silicon with Modulated Optical Reflectance

Autor: J. Opsal, A. Rosencwaig, P. Geraghty, Walter Lee Smith, David L. Willenborg
Rok vydání: 1988
Předmět:
Zdroj: Photoacoustic and Photothermal Phenomena ISBN: 9783662137055
DOI: 10.1007/978-3-540-48181-2_59
Popis: In modulated reflectance experiments on silicon wafers the signal arises primarily from the Drude modulation of the silicon refractive index from the laser generated electron-hole plasma density [1,2]. We have recently found that both the magnitude and phase of the modulated reflectance signal, ΔR/R, are usually dependent on the duration of continuous pump and probe laser irradiation [1]. We attribute this temporal behavior of the ΔR/R signal to a laser induced modification of the defect-related electronic interface states at the Si/Si02 interface which act as trapping sites for the photogenerated carriers. Furthermore, there appear to be two broad categories of such interface states; stable and metastable. The stable states undergo temporal modification only under continuous high intensity laser irradiation, while the metastable states also exhibit spontaneous temporal evolution.
Databáze: OpenAIRE