Molecular-beam-epitaxy growth of strained Ga1−x InxAs/AlInAs/InP and application to 1.55 μm multi-quantum-well lasers

Autor:	Kazuaki Nishikata, Hitoshi Shimizu, F. Iwase, Yoshiyuki Hirayama, Takeyoshi Matsuda, Michinori Irikawa
Rok vydání:	1995
Předmět:	Threshold current Photoluminescence Infrared Chemistry business.industry Mineralogy Crystal growth Condensed Matter Physics Laser law.invention Semiconductor laser theory Inorganic Chemistry law Materials Chemistry Optoelectronics business Quantum well Molecular beam epitaxy
Zdroj:	Journal of Crystal Growth. 150:1328-1332
ISSN:	0022-0248
DOI:	10.1016/0022-0248(95)80154-5
Popis:	Dependence of critical layer thickness ( h c ) and photoluminescence (PL) intensity on growth temperature ( T g ) was investigated for 1% compressively strained Ga 0.32 In 0.68 As/AlInAs on InP. We found, for the first time, a strong T g dependence of h c in this system with h c of 24 nm at 500°C and 14 nm at 530°C. The PL intensity increased with T g , reaching a maximum at 530°C. We fabricated 1.55 μm multi-quantum-well (MQW) lasers with 1% compressively strained wells under optimized growth conditions. Threshold current density as low as 1.08 kA/cm 2 at a cavity length of 800 μm was obtained. This threshold current density is one of the lowest values obtained for 1.55 μm AlGaInAs MQW lasers grown by molecular beam epitaxy (MBE).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5cf8ebad68e3280883fab8794a5445b https://doi.org/10.1016/0022-0248(95)80154-5 Zobrazit plný text záznamu Full Text from ScienceDirect