Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells
| Autor: | Jean-Francois Lampin, Xavier Wallart, J.P. Gouy, F. Mollot |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Photocurrent
Photoluminescence Materials science Condensed matter physics Resonant-tunneling diode Resonance Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Tunnel effect General Materials Science Electrical and Electronic Engineering Ground state Quantum tunnelling Quantum well |
| Zdroj: | Superlattices and Microstructures. 24:273-278 |
| ISSN: | 0749-6036 |
| DOI: | 10.1006/spmi.1996.0244 |
| Popis: | We have experimentally investigated the light- and heavy-hole states in tensile-strained GaInAs quantum wells using photoluminescence and photocurrent spectroscopies. Under special conditions, the strain resulting from the lattice mismatch is large enough to reverse the order of the light- and heavy-hole levels (the first light-hole level becomes the ground state). We obtained an experimental light-to-heavy-hole splitting of 50 meV in agreement with calculations. To take advantage of this situation, we realized and characterized the first p-i-p resonant tunnelling diode on an InP substrate. Resonances are clearly visible in the conductance-voltage characteristics but the first resonance is not yet enhanced as expected in this structure. We discuss the reasons that prevent the observation of the first light-hole resonance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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