Variability of nanoscale triple gate FinFETs: Prediction and analysis method

Autor:	C.A. Dimitriadis, Ioannis Messaris, N. Fasarakis, Spiridon Nikolaidis, A. Tsormpatzoglou, D. H. Tassis
Rok vydání:	2014
Předmět:	Materials science business.industry Doping Hardware_PERFORMANCEANDRELIABILITY Time efficient Hardware_INTEGRATEDCIRCUITS Electronic engineering Inverter Optoelectronics Triple gate Drain current business Nanoscopic scale Analysis method Hardware_LOGICDESIGN Electronic circuit
Zdroj:	ICECS
DOI:	10.1109/icecs.2014.7050084
Popis:	Our analytical compact drain current model for undoped or lightly doped nanoscale FinFETs has been successfully used to predict variability in the electrical characteristics of FinFETs. A simplified version of the model behaves almost as good as the analytical model but is more computational time efficient. Implementation of the models in verilog-A can be used to predict variability in circuits such as the inverter.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::a5ab6dee9d003fe252618a58730192e1 https://doi.org/10.1109/icecs.2014.7050084 Zobrazit plný text záznamu