Microcrystalline silicon solar cells fabricated by VHF plasma CVD method
| Autor: | Keishi Saito, Shuichiro Sugiyama, Kyousuke Ogawa, Masafumi Sano, Shotaro Okabe |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment business.industry Chemistry Nanocrystalline silicon Mineralogy chemistry.chemical_element Quantum dot solar cell Solar energy Polymer solar cell Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Monocrystalline silicon Plasma-enhanced chemical vapor deposition law Solar cell Optoelectronics business |
| Zdroj: | Solar Energy Materials and Solar Cells. 86:565-575 |
| ISSN: | 0927-0248 |
| Popis: | A series of systematic investigations on microcrystalline silicon (μc-Si:H) solar cells at high deposition rates has been studied. The effect of high deposition pressure and narrow cathode-substrate (CS) distance on the deposition rate and quality of microcrystalline silicon is discussed. The microcrystalline silicon solar cell is adopted as middle cell and bottom cell in a three-stacked junction solar cell. The characteristics of large area three-stacked junction solar cells, whose area is 801.6 cm 2 including grid electrode areas, are studied in various deposition rates from 1 to 3 nm/s of microcrystalline silicon. An initial efficiency of 13.1% is demonstrated in the three-stacked junction solar cell with microcrystalline silicon deposited at 3 nm/s. |
| Databáze: | OpenAIRE |
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